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vishay siliconix SIZ910DT new product document number: 63539 s11-2380-rev. c, 28-nov-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual n-channel 30 v (d-s) mosfets features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfets ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? notebook system power ? pol ? synchronous buck converter notes: a. package limited - t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpair is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation pr ocess in manufacturing. a solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. maximum under steady state conditions is 62 c/w for channel-1 and 55 c/w for channel-2. product summary v ds (v) r ds(on) ( ? ) (max.) i d (a) q g (typ.) channel-1 30 0.0058 at v gs = 10 v 40 a 12.5 nc 0.0075 at v gs = 4.5 v 40 a channel-2 30 0.0030 at v gs = 10 v 40 a 29 nc 0.0035 at v gs = 4.5 v 40 a d 1 s 2 n-channel 2 mosfet n-channel 1 mosfet g 1 s 1 /d 2 g 2 orderin g information: SIZ910DT-t1-ge3 (lead (p b )-free and halogen-free) s 2 g 2 g 1 d 1 d 1 6 7 8 3 2 1 d 1 s 1 /d 2 5 mm 6 mm d 1 4 5 pin 1 powerpair ? 6 x 5 pin 9 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol channel-1 channel-2 unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 40 a 40 a a t c = 70 c 40 a 40 a t a = 25 c 22 b, c 32 b, c t a = 70 c 17 b, c 26 b, c pulsed drain current (t = 300 s) i dm 100 120 continuous source drain diode current t c = 25 c i s 24 a 28 a t a = 25 c 3.8 b, c 4.3 b, c single pulse avalanche current l = 0.1 mh i as 25 40 single pulse avalanche energy e as 31 80 mj maximum power dissipation t c = 25 c p d 48 100 w t c = 70 c 31 64 t a = 25 c 4.6 b, c 5.2 b, c t a = 70 c 3 b, c 3.3 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol channel-1 channel-2 unit typ. max. typ. max. maximum junction-to-ambient b, f t ? 10 s r thja 22 27 19 24 c/w maximum junction-to-case (drain) steady state r thjc 2.1 2.6 1 1.25
www.vishay.com 2 document number: 63539 s11-2380-rev. c, 28-nov-11 vishay siliconix SIZ910DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a ch-1 30 v v gs = 0 v, i d = 250 a ch-2 30 v ds temperature coefficient ? v ds /t j i d = 250 a ch-1 33 mv/c i d = 250 a ch-2 31 v gs(th) temperature coefficient ? v gs(th) /t j i d = 250 a ch-1 - 5.4 i d = 250 a ch-2 - 6.1 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ch-1 1.2 2.2 v v ds = v gs , i d = 250 a ch-2 1 2.2 gate source leakage i gss v ds = 0 v, v gs = 20 v ch-1 100 na ch-2 100 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v ch-1 1 a v ds = 30 v, v gs = 0 v ch-2 1 v ds = 30 v, v gs = 0 v, t j = 55 c ch-1 5 v ds = 30 v, v gs = 0 v, t j = 55 c ch-2 5 on-state drain current b i d(on) v ds ?? 5 v, v gs = 10 v ch-1 20 a v ds ?? 5 v, v gs = 10 v ch-2 25 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 20 a ch-1 0.0048 0.0058 ? v gs = 10 v, i d = 20 a ch-2 0.0025 0.0030 v gs = 4.5 v, i d = 20 a ch-1 0.0060 0.0075 v gs = 4.5 v, i d = 20 a ch-2 0.0029 0.0035 forward transconductance b g fs v ds = 10 v, i d = 20 a ch-1 94 s v ds = 10 v, i d = 20 a ch-2 140 dynamic a input capacitance c iss channel-1 v ds = 15 v, v gs = 0 v, f = 1 mhz channel-2 v ds = 15 v, v gs = 0 v, f = 1 mhz ch-1 1500 pf ch-2 3600 output capacitance c oss ch-1 285 ch-2 660 reverse transfer capacitance c rss ch-1 125 ch-2 305 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 20 a ch-1 26 40 nc v ds = 15 v, v gs = 10 v, i d = 20 a ch-2 60 110 channel-1 v ds = 15 v, v gs = 4.5 v, i d = 20 a channel-2 v ds = 15 v, v gs = 4.5 v, i d = 20 a ch-1 12.5 19 ch-2 29 51 gate-source charge q gs ch-1 4.7 ch-2 10 gate-drain charge q gd ch-1 4 ch-2 9.5 gate resistance r g f = 1 mhz ch-1 0.5 2.6 5.2 ? ch-2 0.1 0.6 1.2
document number: 63539 s11-2380-rev. c, 28-nov-11 www.vishay.com 3 vishay siliconix SIZ910DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 4.5 v, r g = 1 ? channel-2 v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 4.5 v, r g = 1 ? ch-1 20 40 ns ch-2 30 60 rise time t r ch-1 25 50 ch-2 35 70 turn-off delay time t d(off) ch-1 25 50 ch-2 35 70 fall time t f ch-1 10 20 ch-2 12 25 tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 10 v, r g = 1 ? channel-2 v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 10 v, r g = 1 ? ch-1 10 20 ch-2 12 25 rise time t r ch-1 25 25 ch-2 12 25 turn-off delay time t d(off) ch-1 30 60 ch-2 35 70 fall time t f ch-1 10 20 ch-2 10 20 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c ch-1 40 a ch-2 40 pulse diode forward current a i sm ch-1 100 ch-2 120 body diode voltage v sd i s = 10 a, v gs = 0 v ch-1 0.8 1.2 v i s = 10 a, v gs = 0 v ch-2 0.8 1.2 body diode reverse recovery time t rr channel-1 i f = 10 a, di/dt = 100 a/s, t j = 25 c channel-2 i f = 10 a, di/dt = 100 a/s, t j = 25 c ch-1 26 50 ns ch-2 36 70 body diode reverse recovery charge q rr ch-1 25 50 nc ch-2 36 70 reverse recovery fall time t a ch-1 17 ns ch-2 20 reverse recovery rise time t b ch-1 9 ch-2 16
www.vishay.com 4 document number: 63539 s11-2380-rev. c, 28-nov-11 vishay siliconix SIZ910DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0.003 0.004 0.005 0.006 0.007 0.008 0 20 40 60 80 100 r ds(on) - on-resistance () i d -drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 6 12 18 24 30 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 24 v v ds = 15 v v ds = 7.5 v i d = 20 a transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 400 800 1200 1600 2000 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance (normalized) t j - junction temperature ( c) i d = 20 a v gs = 10, 4.5 v
document number: 63539 s11-2380-rev. c, 28-nov-11 www.vishay.com 5 vishay siliconix SIZ910DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j -temperature ( c) i d = 250 a on-resistance vs. gate-to-source voltage single pulse power 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0246810 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 20 a 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 power (w) time (s) safe operating area, junction-to-ambient 0.01 0.1 1 10 100 1000 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 10 s 100 ms limited by r ds(on) * 1 ms t a = 25 c single pulse bvdss limited 10 ms 100 s 1 s dc
www.vishay.com 6 document number: 63539 s11-2380-rev. c, 28-nov-11 vishay siliconix SIZ910DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) package limited power, junction-to-case 0 10 20 30 40 50 25 50 75 100 125 150 power (w) t c - case temperature ( c)
document number: 63539 s11-2380-rev. c, 28-nov-11 www.vishay.com 7 vishay siliconix SIZ910DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 62 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted normalized thermal transient impedance, junction-to-case 0.1 1 0.0001 0.001 0.01 0.1 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 single pulse 0.02
www.vishay.com 8 document number: 63539 s11-2380-rev. c, 28-nov-11 vishay siliconix SIZ910DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0.0020 0.0022 0.0024 0.0026 0.0028 0.0030 0.0032 0 20 40 60 80 100 120 r ds(on) - on-resistance () i d -drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 10 20 30 40 50 60 70 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 24 v v ds = 15 v v ds = 7.5 v i d = 20 a transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance (normalized) t j - junction temperature ( c) i d = 20 a v gs = 10 v, 4.5 v
document number: 63539 s11-2380-rev. c, 28-nov-11 www.vishay.com 9 vishay siliconix SIZ910DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j -temperature ( c) i d = 250 a on-resistance vs. gate-to-source voltage single pulse power 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0246810 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 20 a 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 power (w) time (s) safe operating area, junction-to-ambient 0.01 0.1 1 10 100 1000 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 10 s 100 ms limited by r ds(on) * 1 ms t a = 25 c single pulse bvdss limited 10 ms 100 s 1 s dc
www.vishay.com 10 document number: 63539 s11-2380-rev. c, 28-nov-11 vishay siliconix SIZ910DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) package limited power, junction-to-case 0 20 40 60 80 100 25 50 75 100 125 150 power (w) t c - case temperature ( c)
document number: 63539 s11-2380-rev. c, 28-nov-11 www.vishay.com 11 vishay siliconix SIZ910DT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63539 . normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja =55 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted normalized thermal transient impedance, junction-to-case 0.1 1 0.0001 0.001 0.01 0.1 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 single pulse 0.05 0.02
package information www.vishay.com vishay siliconix revision: 07-nov-11 1 document number: 63656 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpair ? 6 x 5 case outline millimeters inches dim. min. nom. max. min. nom. max. a 0.70 0.75 0.80 0.028 0.030 0.032 a1 0.00 - 0.10 0.000 - 0.004 a3 0.20 ref 0.008 ref b 0.51 bsc 0.020 bsc b1 0.25 bsc 0.010 bsc d 5.00 bsc 0.197 bsc d1 3.75 3.80 3.85 0.148 0.150 0.152 e 6.00 bsc 0.236 bsc e1 2.62 2.67 2.72 0.103 0.105 0.107 e2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 bsc 0.005 bsc k 0.45 typ. 0.018 typ. k1 0.66 typ. 0.026 typ. l 0.43 bsc 0.017 bsc l3 0.23 bsc 0.009 bsc z 0.34 bsc 0.013 bsc ecn: c11-1242-rev. a, 07-nov-11 dwg: 6005 a1 b1 f e pin 1 pin 2 pin 3 pin 4 pin 8 pin 7 pin 6 pin 5 a back s ide view d 0.10 c 2x a 0.10 c 0.08 c 0.10 c 2x c top s ide view a3 f e2 e e1 k z l d1 b k1 d1 l3 pin 1 pin 2 pin 3 pin 4 pin 8 pin 7 pin 6 pin 5 pin #1 ident (optional)
document number: 67480 www.vishay.com revision: 13-jan-11 1 pad pattern vishay siliconix recommended minimum pad for powerpair ? 6 x 5 recommended minim u m pad dimensions in mm (inches) 7.0 8 0 (0.279) (0,0) 0.407 (0.016) 0.616 (0.024) 0.407 (0.016) 2.720 (0.107) 0.970 (0.03 8 ) 0.700 (0.02 8 ) 3.260 (0.12 8 ) pin 1 1.270 (0.050) 0.560 (0.022) 2.1 8 5 (0.0 8 6) 3.920 (0.154) 2.153 (0.0 8 5) 0.567 (0.022) 8 .0 8 0 (0.31 8 ) 5. 8 20 (0.229) 1.960 (0.077)
legal disclaimer notice www.vishay.com vishay revision: 12-mar-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products no t expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale , including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding th e design or manufacture of the part. please contact authorized vishay personnel t o obtain written terms and conditions regardin g products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu.

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